Samsung Unveils Groundbreaking LPDDR5X DRAM with 10.7Gbps Speed and Power-Saving Technologies

Samsung has recently announced a new and faster version of its LPDDR5X DRAM, which runs at 10.7Gbps, making it over 11% faster than the LPDDR5T offered by its competitor SK Hynix. This new chip is produced on a 12nm class process, making it not only faster but also significantly smaller, making it ideal for use in on-device AI applications.

Samsung’s Executive Vice President of Memory Product Planning, YongCheol Bae, stated that with the increasing demand for low-power, high-performance memory beyond mobile devices, LPDDR DRAM is expected to have broader applications in PCs, accelerators, servers, and automobiles. Samsung is committed to innovation and collaboration with customers to deliver optimized products for the on-device AI era.

The 10.7Gbps LPDDR5X from Samsung offers increased performance by over 25% and capacity by more than 30% compared to LPDDR5. It also increases the single package capacity of mobile DRAM to 32GB. The LPDDR5X includes power-saving technologies that improve power efficiency by 25% and allow the chip to enter low-power mode for extended periods.

Samsung plans to start mass production of the 10.7Gbps LPDDR5X DRAM in the second half of the year upon successful verification with mobile application processor (AP) and mobile device providers. This advancement in memory technology is set to impact various industries and applications further driving innovation and performance enhancements in the tech sector.

With this new offering from Samsung, customers can expect improved performance and reduced power consumption in their devices while also being able to use these chips in a wider range of applications beyond just mobile devices.